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trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 0.35-ghz to 4-ghz quadrature modulators check for samples: trf370315 , trf370333 1 features applications 2 ? 75-dbc single-carrier wcdma acpr ? cellular base transceiver station transmit at C 11-dbm channel power channel ? low noise floor: C 163 dbm/hz ? cdma: is95, umts, cdma2000, td-scdma ? oip3 of 23 dbm ? tdma: gsm, is-136, edge/uwc-136 ? p1db of 9 dbm ? wireless local loop ? unadjusted carrier feedthrough of C 40 dbm ? wireless man wideband transceivers space ? unadjusted side-band suppression of C 40 dbc the final frontier ? single supply: 4.5 v C 5.5 v operation ? silicon germanium technology ? trf370333 with 3.3-v cm at i, q baseband inputs ? trf370315 with 1.5-v cm at i, q baseband inputs description the trf370315 and trf370333 are low-noise direct quadrature modulators, capable of converting complex modulated signals from baseband or if directly up to rf. the trf370315 and trf370333 are ideal for high-performance direct rf modulation from 350 mhz up to 4 ghz. these modulators are implemented as a double-balanced mixer. the rf output block consists of a differential to single-ended converter and an rf amplifier capable of driving a single-ended 50- load without any need of external components. the trf370333 and trf370315 devices have different common-mode voltage ratings at the i/q baseband inputs. the trf370315 requires a 1.5-v common-mode voltage, and the trf370333 requires a 3.3-v common-mode voltage. 1 please be aware that an important notice concerning availability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 all trademarks are the property of their respective owners. production data information is current as of publication date. copyright ? 2006 C 2011, texas instruments incorporated products conform to specifications per the terms of the texas instruments standard warranty. production processing does not necessarily include testing of all parameters. gnd rf_out 15 14 13 rge package (top view) vcc gnd bbin bbip gnd gnd 24 23 22 21 20 19 gnd 12 3 lop 4 lon 5 gnd gnd 7 8 9 bbqn 10 11 bbqp gnd 12 gnd 18 vcc 17 gnd 16 ncnc nc ncnc p0024-04 6
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. functional block diagram note: nc = no connection 2 copyright ? 2006 C 2011, texas instruments incorporated vcc 24 gnd 23 bbin 22 bbip 21 gnd 20 gnd 20 gnd 19 vcc 18 gnd 17 rf_out 16 15 14 gnd 13 gnd 8 7 bbqn 9 bbqp 10 gnd 11 gnd 12 1 2 gnd 3 lop 4 longnd 5 6 0/90 s ncnc b0175-01 nc nc nc
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 device information terminal functions terminal i/o description name no. bbin 22 i in-phase input bbip 21 i in-phase input bbqn 9 i in-quadrature input bbqp 10 i in-quadrature input 2, 5, 8,11, gnd 12, 14, 17, C ground 19, 20, 23 lon 4 i local oscillator input lop 3 i local oscillator input 1, 6, 7, 13, nc C no connect 15 rf_out 16 o rf output vcc 18, 24 C power supply absolute maximum ratings (1) over operating free-air temperature range (unless otherwise noted). value (2) unit supply voltage range C 0.3 v to 6 v digital i/o voltage range C 0.3 v to v i + 0.3 v t j operating virtual junction temperature range C 40 to 150 c t a operating ambient temperature range C 40 to 85 c t stg storage temperature range C 65 to 150 c human body model (hbm) 75 v esd electrostatic discharge ratings charged device model (cdm) 75 v (1) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) all voltage values are with respect to network ground terminal. recommended operating conditions over operating free-air temperature range (unless otherwise noted). min nom max unit v cc power-supply voltage 4.5 5 5.5 v thermal characteristics parameter test conditions value unit r ja thermal resistance, junction-to-ambient high-k board, still air 29.4 c/w r jc thermal resistance, junction-to-case 18.6 c/w copyright ? 2006 C 2011, texas instruments incorporated 3
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com electrical characteristics over operating free-air temperature range (unless otherwise noted). parameter test conditions min typ max unit dc parameters total supply current (1.5 v cm) t a = 25 c 195 205 i cc ma total supply current (3.3 v cm) t a = 25 c 210 235 lo input (50- ? , single-ended) lo frequency range 0.35 4 ghz f lo lo input power C 5 0 12 dbm lo port return loss 15 db baseband inputs trf370333 3.3 v cm i and q input dc common voltage v trf370315 1.5 bw 1-db input frequency bandwidth 350 mhz input impedance, resistance 10 k ? trf370333 input impedance, parallel capacitance 3 pf z i(single ended) input impedance, resistance 5 k ? trf370315 input impedance, parallel capacitance 3 pf electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 350 mhz at 0 dbm, trf370333 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or q) rms C 4.18 db voltage g voltage gain (1) trf370333: output rms voltage over input i (or q) rms C 4.0 db voltage p1db output compression point 9.4 dbm ip3 output ip3 24.5 dbm ip2 output ip2 measured at f lo + 2 f bb 73.8 dbm carrier feedthrough unadjusted 35.6 dbm sideband suppression unadjusted 33.8 dbc dc only to bb inputs, 13 mhz offset from f lo C 158.0 output noise floor 1.8-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 152.6 dbm/hz 6-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 157.4 (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 400 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or q) rms C 2.409 db voltage g voltage gain (1) trf370333: output rms voltage over input i (or q) rms C 1.905 db voltage p1db output compression point 9.4 dbm ip3 output ip3 20 23 dbm ip2 output ip2 measured at f lo + 2 f bb 62 dbm carrier feedthrough unadjusted C 37 dbm sideband suppression unadjusted C 39 dbc (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . 4 copyright ? 2006 C 2011, texas instruments incorporated
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 900 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or C 3.552 db q) rms voltage g voltage gain (1) trf370333: output rms voltage over input i (or C 2.79 db q) rms voltage p1db output compression point 9 dbm ip3 output ip3 20 23 dbm ip2 output ip2 measured at f lo + 2 f bb 63 dbm carrier feedthrough unadjusted C 37 dbm sideband suppression unadjusted C 42 dbc output return loss 9 db dc only to bb inputs, 13 mhz offset from f lo C 160.4 output noise floor 1.8-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 156.6 dbm/hz 6-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 158.5 1 edge signal, p out = C 5 dbm 0.59% 1 edge signal, p out = 0 dbm 0.63% evm error vector magnitude (rms) 1 edge signal, p out = 0 dbm, 2nd harmonic of lo 1% = C 15 dbm, 3rd harmonic of lo = C 33 dbm (2) (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . (2) the second- and third-harmonic tests were made independently at each frequency. electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 1800 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or C 3.345 db q) rms voltage g voltage gain (1) trf370333: output rms voltage over input i (or C 2.367 db q) rms voltage p1db output compression point 9.5 dbm ip3 output ip3 20 23 dbm ip2 output ip2 measured at f lo + 2 f bb 55 dbm carrier feedthrough unadjusted C 40 dbm sideband suppression unadjusted C 47 dbc output return loss 8 db dc only to bb inputs, 13 mhz offset from f lo C 162.6 output noise floor 1.8-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 160 dbm/hz 6-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 159.4 1 edge signal, p out = C 5 dbm 0.66% 1 edge signal, p out = 0 dbm 0.74% evm error vector magnitude (rms) 1 edge signal, p out = 0 dbm, 2nd harmonic of lo 1% = C 15.5 dbm, 3rd harmonic of lo = C 30 dbm (2) (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . (2) the second- and third-harmonic tests were made independently at each frequency. copyright ? 2006 C 2011, texas instruments incorporated 5
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 1960 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or C 3.449 db q) rms voltage g voltage gain (1) trf370333: output rms voltage over input i (or C 2.479 db q) rms voltage p1db output compression point 9.5 dbm output ip3, trf370315 20 23 ip3 dbm output ip3, trf370333 18 20 ip2 output ip2 measured at f lo + 2 f bb 55 dbm carrier feedthrough unadjusted C 40 dbm sideband suppression unadjusted C 47 dbc output return loss 8 db dc only to bb inputs, 13 mhz offset from f lo C 162.6 output noise floor 1.8-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 160 dbm/hz 6-mhz offset from f lo ; 1 cw tone; p out = 0 dbm C 159.4 1 edge signal, p out = C 5 dbm 0.66% 1 edge signal, p out = 0 dbm 0.74% evm error vector magnitude (rms) 1 edge signal, p out = 0 dbm, 2nd harmonic of lo 1% = C 15.5 dbm, 3rd harmonic of lo = C 30 dbm (2) (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . (2) the second- and third-harmonic tests were made independently at each frequency. electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 2140 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or C 3.432 db q) rms voltage g voltage gain (1) trf370333: output rms voltage over input i (or C 2.791 db q) rms voltage p1db output compression point 9.5 dbm output ip3, trf370315 20 23 ip3 dbm output ip3, trf370333 18 21 ip2 output ip2 measured at f lo + 2 f bb 58 dbm carrier feedthrough unadjusted C 40 dbm sideband suppression unadjusted C 47 dbc output return loss 8.5 db 20-mhz offset from f lo ; dc only to bb inputs C 163 output noise floor dbm/hz 20-mhz offset from f lo ; 1 wcdma signal; C 162 p in = C 20.5 dbvrms (i and q input) 1 wcdma signal; p out = C 13 dbm C 75.8 adjacent-channel power acpr 1 wcdma signal; p out = C 9 dbm C 72 dbc ratio 4 wcdma signals; p out = C 23 dbm per carrier C 68 1 wcdma signal; p out = C 13 dbm C 79 alternate-channel power 1 wcdma signal; p out = C 9 dbm C 80.5 dbc ratio 4 wcdma signals; p out = C 23 dbm per carrier C 69 (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . 6 copyright ? 2006 C 2011, texas instruments incorporated
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 2500 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or C 2.892 db q) rms voltage g voltage gain (1) trf370333: output rms voltage over input i (or C 1.379 db q) rms voltage p1db output compression point 9.5 dbm ip3 output ip3 18 21 dbm ip2 output ip2 measured at f lo + 2 f bb 63 dbm carrier feedthrough unadjusted C 38 dbm sideband suppression unadjusted C 47 dbc (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 3600 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or C 1.265 db q) rms voltage g voltage gain (1) trf370333: output rms voltage over input i (or 1.529 db q) rms voltage p1db output compression point 9.5 dbm ip3 output ip3 20 23 dbm ip2 output ip2 measured at f lo + 2 f bb 63 dbm carrier feedthrough unadjusted C 41 dbm sideband suppression unadjusted C 45 dbc (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . electrical characteristics over recommended operating conditions, power supply = 5 v, t a = 25 c, f lo = 4000 mhz at 0 dbm, trf370315 (unless otherwise noted). rf output parameters parameter test conditions min typ max unit trf370315: output rms voltage over input i (or C 2.242 db q) rms voltage g voltage gain (1) trf370333: output rms voltage over input i (or 0.543 db q) rms voltage p1db output compression point 9 dbm ip3 output ip3 19 22 dbm ip2 output ip2 measured at f lo + 2 f bb 50 dbm carrier feedthrough unadjusted C 37 dbm sideband suppression unadjusted C 40 dbc (1) single 4-mhz cw baseband input tone, differential-ended 196 v rms . copyright ? 2006 C 2011, texas instruments incorporated 7
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com typical characteristics output power output power vs vs baseband voltage frequency and temperature figure 1. figure 2. output power output power vs vs frequency and supply voltage frequency and lo power figure 3. figure 4. 8 copyright ? 2006 C 2011, texas instruments incorporated 0.01 0.1 1 vbb baseband voltage, single-ended, rms v - - 1510 50 5 1015 20 - -- - p output power at 1.8 ghz dbm out - - trf3703-15trf3703-33 trf3703-15trf3703-33 f ? frequency ? mhz ?10 ?9 ?8 ?7 ?6 ?5 ?4 ?3 ?2 ?1 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 p out ? output power ? dbm g010 40 c 25 c 85 c lo = 0 dbv cc = 5 v f ? frequency ? mhz ?7 ?6 ?5 ?4 ?3 ?2 ?1 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 p out ? output power ? dbm g012 v cc = 5 v t a = 25 c 5 dbm 5 dbm 0 dbm f ? frequency ? mhz ?10 ?9 ?8 ?7 ?6 ?5 ?4 ?3 ?2 ?1 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 p out ? output power ? dbm g011 lo = 0 dbt a = 25 c 4.5 v 5.5 v 5 v
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 typical characteristics (continued) p1db p1db vs vs frequency and temperature frequency and supply voltage figure 5. figure 6. trf370315 p1db oip3 vs vs frequency and lo power frequency and temperature figure 7. figure 8. copyright ? 2006 C 2011, texas instruments incorporated 9 f ? frequency ? mhz 0 2 4 6 8 10 12 0 500 1000 1500 2000 2500 3000 3500 4000 4500 p1db ? dbm g003 5 dbm v cc = 5 v t a = 25 c 0 dbm 5 dbm f ? frequency ? mhz 0 2 4 6 8 10 12 14 0 500 1000 1500 2000 2500 3000 3500 4000 4500 p1db ? dbm g001 40 c 25 c lo = 0 dbv cc = 5 v 85 c f ? frequency ? mhz 0 2 4 6 8 10 12 0 500 1000 1500 2000 2500 3000 3500 4000 4500 p1db ? dbm g002 4.5 v lo = 0 dbt a = 25 c 5.5 v 5 v 10 12 14 16 18 20 22 24 26 28 30 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f ? frequency ? mhz oip3 ? dbm g014 lo = 0 dbmv cc = 5 v 40 c 25 c 85 c
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com typical characteristics (continued) trf370333 trf370315 oip3 oip3 vs vs frequency and temperature frequency and supply voltage figure 9. figure 10. trf370333 trf370315 oip3 oip3 vs vs frequency and supply voltage frequency and lo power figure 11. figure 12. 10 copyright ? 2006 C 2011, texas instruments incorporated f ? frequency ? mhz 10 12 14 16 18 20 22 24 26 28 30 0 500 1000 1500 2000 2500 3000 3500 4000 4500 oip3 ? dbm g027 lo = 0 dbv cc = 5 v 40 c 25 c 85 c 10 12 14 16 18 20 22 24 26 28 30 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f ? frequency ? mhz oip3 ? dbm g015 lo = 0 dbmt a = 25 c 5.5 v 4.5 v 5 v f ? frequency ? mhz 12 16 20 24 28 32 36 40 0 500 1000 1500 2000 2500 3000 3500 4000 4500 oip3 ? dbm g028 lo = 0 dbt a = 25 c 4.5 v 5.5 v 5 v 10 12 14 16 18 20 22 24 26 28 30 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f ? frequency ? mhz oip3 ? dbm g013 +5 dbm 0 dbm 5 dbm v cc = 5 v t a = 25 c
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 typical characteristics (continued) trf370333 oip3 unadjusted sideband suppression vs vs frequency and lo power frequency and temperature figure 13. figure 14. unadjusted sideband suppression unadjusted sideband suppression vs vs frequency and supply voltage frequency and lo power figure 15. figure 16. copyright ? 2006 C 2011, texas instruments incorporated 11 12 16 20 24 28 32 36 40 0 500 1000 1500 2000 2500 3000 3500 4000 4500 f ? frequency ? mhz oip3 ? dbm g029 0 dbm 5 dbm v cc = 5 v t a = 25 c +5 dbm f ? frequency ? mhz ?60 ?50 ?40 ?30 ?20 ?10 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 ss ? unadjusted sideband suppression ? dbc g007 lo = 0 dbp out = 3 dbm v cc = 5 v 40 c 85 c 25 c f ? frequency ? mhz ?60 ?50 ?40 ?30 ?20 ?10 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 ss ? unadjusted sideband suppression ? dbc g008 lo = 0 dbp out = 3 dbm t a = 25 c 4.5 v 5.5 v 5 v f ? frequency ? mhz ?60 ?50 ?40 ?30 ?20 ?10 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 ss ? unadjusted sideband suppression ? dbc g009 v cc = 5 v p out = 3 dbm t a = 25 c 5 dbm 5 dbm 0 dbm
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com typical characteristics (continued) adjusted sideband suppression adjusted sideband suppression vs vs frequency and temperature frequency and temperature figure 17. figure 18. adjusted sideband suppression noise at 13-mhz offset (dbm/hz) vs vs frequency and temperature frequency and supply voltage figure 19. figure 20. 12 copyright ? 2006 C 2011, texas instruments incorporated f ? frequency ? ghz ?168 ?166 ?164 ?162 ?160 ?158 ?156 ?154 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 noise at 13-mhz offset ? dbm/hz g019 4.5 v 5.5 v 5 v p out = 5 dbm lo = 5 dbmt a = 25 c ?80 ?70 ?60 ?50 ?40 ?30 ?20 2100 2120 2140 2160 2180 2200 f ? frequency ? mhz ss ? adjusted sideband suppression ? dbc g018 adj at 2140 mhzv cc = 5 v 25 c 85 c 40 c ?80 ?70 ?60 ?50 ?40 ?30 ?20 900 920 940 960 980 1000 f ? frequency ? mhz ss ? adjusted sideband suppression ? dbc g016 25 c 85 c adj at 942.6 mhzv cc = 5 v 40 c ?80 ?70 ?60 ?50 ?40 ?30 ?20 1850 1870 1890 1910 1930 1950 f ? frequency ? mhz ss ? adjusted sideband suppression ? dbc g017 25 c 85 c adj at 1900 mhzv cc = 5 v 40 c
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 typical characteristics (continued) noise at 13-mhz offset (dbm/hz) noise at 13-mhz offset (dbm/hz) vs vs frequency and temperature frequency and temperature figure 21. figure 22. noise at 13-mhz offset (dbm/hz) unadjusted carrier feedthrough vs vs frequency and temperature frequency and supply voltage figure 23. figure 24. copyright ? 2006 C 2011, texas instruments incorporated 13 f ? frequency ? ghz ?168 ?166 ?164 ?162 ?160 ?158 ?156 ?154 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 noise at 13-mhz offset ? dbm/hz g020 85 c 40 c 25 c p out = 0 dbm lo = 5 dbmv cc = 5 v f ? frequency ? ghz ?168 ?166 ?164 ?162 ?160 ?158 ?156 ?154 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 noise at 13-mhz offset ? dbm/hz g021 85 c 40 c 25 c p out = 5 dbm lo = 5 dbmv cc = 5 v f ? frequency ? ghz ?168 ?166 ?164 ?162 ?160 ?158 ?156 ?154 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 noise at 13-mhz offset ? dbm/hz g022 85 c 40 c 25 c p out = 10 dbm lo = 5 dbmv cc = 5 v f ? frequency ? mhz ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 cs ? unadjusted carrier feedthrough ? dbm g025 lo = 0 dbt a = 25 c 4.5 v 5.5 v 5 v
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com typical characteristics (continued) unadjusted carrier feedthrough vs frequency and temperature figure 25. 14 copyright ? 2006 C 2011, texas instruments incorporated f ? frequency ? mhz ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 cs ? unadjusted carrier feedthrough ? dbm g026 lo = 0 dbv cc = 5 v 85 c 40 c 25 c
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 application information and evaluation board basic connections ? see figure 26 for proper connection of the trf3703315 and trf370333 modulator. ? connect a single power supply (4.5 v C 5.5 v) to pins 18 and 24. these pins should be decoupled as shown on pins 4, 5, 6, and 7. ? connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to gnd. ? connect a single-ended lo source of desired frequency to lop (amplitude between C 5 dbm and 12 dbm). this should be ac-coupled through a 100-pf capacitor. ? terminate the ac-coupled lon with 50 ? to gnd. ? connect a baseband signal to pins 21 = i, 22 = i, 10 = q, and 9 = q. ? the differential baseband inputs should be set to the proper level, 3.3 v for the trf370333 or 1.5 v for the trf370315. ? rf_out, pin 16, can be fed to a spectrum analyzer set to the desired frequency, lo baseband signal. this pin should also be ac-coupled through a 100-pf capacitor. ? all nc pins can be left floating. esd sensitivity rf devices may be extremely sensitive to electrostatic discharge (esd). to prevent damage from esd, devices should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated level. rated esd levels should also not be exceeded while the device is installed on a printed circuit board (pcb). follow these guidelines for optimal esd protection: ? low esd performance is not uncommon in rf ics; see the absolute maximum ratings table. therefore, customers esd precautions should be consistent with these ratings. ? the device should be robust once assembled onto the pcb unless external inputs (connectors, etc.) directly connect the device pins to off-board circuits. copyright ? 2006 C 2011, texas instruments incorporated 15
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com (1) do not install. figure 26. trf3703 evm schematic 16 copyright ? 2006 C 2011, texas instruments incorporated c1 100 pf c2 100 pf 1 j1 sma_end nc 1 gnd 2 lop 3 lon 4 gnd 5 nc 6 nc 7 gnd 8 qn 9 qp 10 gnd 11 gnd 12 nc 13 gnd 14 nc 15 rf_out 16 gnd 17 vccmod 18 gnd 19 gnd 20 ip 21 in 22 gnd 23 vcclo 24 lop 1 2 2 3 3 4 4 5 5 j2 sma_end lon 1 2 3 4 5 j3 sma_end in 1 2 3 4 5 j4 sma_end ip c5 1000 pf 1 2 3 4 5 j7 sma_end c3 100 pf c4 1000 pf 1 2 3 4 5 j5 sma_end qn 1 2 3 4 5 j6 sma_end qp rf_out w1 2pos_jumper w2 2pos_jumper c8 c9 r1 0 + c6 + c7 4.7uf r4 0 r5 0 r2 0 r3 0 s0214-01 0.1 f (note 1) m 0.1 f (note 1) m 4.7 f m u1 trf3703
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 figure 27 shows the top view of the trf3703 evm board. figure 27. trf3703 evm board layout table 1. bill of materials for trf3703 evm value footprint qty part number vendor digi-key number ref des not installed tantalum 3216 2 t491a475k010as kemet 399-1561-1-nd c6, c7 4.7- f, 10-v, 10% capacitor 1000-pf, 50-v, 603 2 ecj-1vc1h102j panasonic pcc2151ct-nd c4, c5 5% capacitor 100-pf, 50-v, 603 3 ecj-1vc1h101j panasonic pcc101acvct-nd c1, c2, c3 5% capacitor capacitor 603 0 c8, c9 0- ? resistor, 603 5 erj-3gey0r00v panasonic p0.0gct-nd r1, r2, r3, 1/10-w, 5% r4, r5 copyright ? 2006 C 2011, texas instruments incorporated 17 bbqp bbqn +5 v bbip bbin lop lon +5 v gnd gnd 50 w rf_out k001
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com table 1. bill of materials for trf3703 evm (continued) value footprint qty part number vendor digi-key number ref des not installed trf3703 24-qfn-pp- 1 ti u1 4x4mm sma connectors sma_end_ 6 16f3627 newark 142-0711-821 j1, j2, j3, small j4, j5, j6, j7 2pos_header 2pos_jump 2 htsw-150-07-l-s samtec n/a w1, w2 gsm applications the trf370315 and trf370333 are suited for gsm applications because of the high linearity and low noise level over the entire recommended operating range. these devices also have excellent evm performance, which makes them ideal for the stringent gsm/edge applications. wcdma applications the trf370315 and trf370333 are also optimized for wcdma applications where both adjacent-channel power ratio (acpr) and noise density are critically important. using texas instruments dac568x series of high-performance digital-to-analog converters as depicted in figure 28 , excellent acpr levels were measured with one-, two-, and four-wcdma carriers. see electrical characteristics , f lo = 2140 mhz for exact acpr values. figure 28. typical transmit setup block diagram 18 copyright ? 2006 C 2011, texas instruments incorporated 16 dac5687 16 clk1 rf_out vcxo ref osc clk2 cdcm7005 clock gen trf3761 pll lo generator trf3703 i/q modulator b0176-01
trf370315 trf370333 www.ti.com slws184j C march 2006 C revised may 2011 definition of specifications unadjusted carrier feedthrough this specification measures the amount by which the local oscillator component is attenuated in the output spectrum of the modulator relative to the carrier. this further assumes that the baseband inputs delivered to the pins of the trf370315 and trf370333 are perfectly matched to have the same dc offset (vcm). this includes all four baseband inputs: i, i, q, and q. this is measured in dbm. adjusted (optimized) carrier feedthrough this differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted around their theoretical value of vcm to yield the maximum suppression of the lo component in the output spectrum. this is measured in dbm. unadjusted sideband suppression this specification measures the amount by which the unwanted sideband of the input signal is attenuated in the output of the modulator, relative to the wanted sideband. this further assumes that the baseband inputs delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90 out of phase. this is measured in dbc. adjusted (optimized) sideband suppression this differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. this is measured in dbc. suppressions overtemperature this specification assumes that the user has gone though the optimization process for the suppression in question, and set the optimal settings for the i, q inputs. this specification then measures the suppression when temperature conditions change after the initial calibration is done. figure 29 shows a simulated output and illustrates the respective definitions of various terms used in this data sheet. the graph assumes a baseband input of 50 khz. figure 29. graphical illustration of common terms copyright ? 2006 C 2011, texas instruments incorporated 19 f ? frequency offset ? khz (relative to carrier) ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 10 ?200 ?150 ?100 ?50 0 50 100 150 200 p ? power ? dbm g024 3 rd lsb (dbc) 3 rd lsb 2 nd lsb lsb (undesired) p out sbs (dbc) carrier usb (desired) 2 nd usb (dbc) 2 nd usb 3 rd usb c (dbm)
trf370315 trf370333 slws184j C march 2006 C revised may 2011 www.ti.com revision history note: page numbers for previous revisions may differ from page numbers in the current version. changes from revision i (july, 2010) to revision j page ? changed voltage gain specifications for f lo = 350-mhz performance data ......................................................................... 4 ? updated voltage gain specifications for f lo = 400-mhz performance data .......................................................................... 4 ? revised voltage gain specifications for f lo = 900-mhz performance data ........................................................................... 5 ? changed voltage gain specifications for f lo = 1800-mhz performance data ....................................................................... 5 ? revised voltage gain specifications for f lo = 1960-mhz performance data ......................................................................... 6 ? updated voltage gain specifications for f lo = 2140-mhz performance data ........................................................................ 6 ? revised voltage gain specifications for f lo = 2500-mhz performance data ......................................................................... 7 ? changed voltage gain specifications for f lo = 3600-mhz performance data ....................................................................... 7 ? updated voltage gain specifications for f lo = 4000-mhz performance data ........................................................................ 7 ? replaced figure 1 ................................................................................................................................................................ 8 changes from revision h (january, 2010) to revision i page ? changed document title to reflect 0.35-ghz minimum operating level ................................................................................ 1 ? updated description section to reflect 350-mhz minimum operation ................................................................................... 1 ? changed lo frequency range minimum specification from 0.4 ghz to 0.35 ghz ............................................................... 4 ? added electrical characteristics table for f lo = 350-mhz performance data ....................................................................... 4 20 copyright ? 2006 C 2011, texas instruments incorporated
package option addendum www.ti.com 10-jun-2014 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples trf370315irger active vqfn rge 24 3000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 trf37 0315 trf370315irget active vqfn rge 24 250 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 trf37 0315 trf370333irger active vqfn rge 24 3000 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 trf37 0333 trf370333irget active vqfn rge 24 250 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 trf37 0333 trf370333irgetg4 active vqfn rge 24 250 green (rohs & no sb/br) cu nipdau level-2-260c-1 year -40 to 85 trf37 0333 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device.
package option addendum www.ti.com 10-jun-2014 addendum-page 2 (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant trf370315irger vqfn rge 24 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 q1 trf370315irget vqfn rge 24 250 180.0 12.4 4.3 4.3 1.5 8.0 12.0 q1 trf370333irger vqfn rge 24 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 q2 trf370333irget vqfn rge 24 250 180.0 12.4 4.3 4.3 1.5 8.0 12.0 q2 package materials information www.ti.com 24-apr-2013 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) trf370315irger vqfn rge 24 3000 338.1 338.1 20.6 trf370315irget vqfn rge 24 250 210.0 185.0 35.0 trf370333irger vqfn rge 24 3000 338.1 338.1 20.6 trf370333irget vqfn rge 24 250 210.0 185.0 35.0 package materials information www.ti.com 24-apr-2013 pack materials-page 2

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